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| www..com PJ2N9013 NPN Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLAS S B PUS H-PULL OPERATION * * * * High total power dissipation(PT=625mW) High collector Current (Ic=500mA) Complementary to PJ2N9012 Excellent hEF Linearity TO-92 SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta= 25C) Rating Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Value 40 20 5 500 625 150 -55 ~150 Uint V V V A W C C P in : 1. Emitter 2. Base 3. Collector P in : 1. Base 2. Emitter 3. Collector ORDERING INFORMATION Device PJ2N9013CT PJ2N9013CX Operating Temperature -20+85 Package TO-92 SOT-23 ELECTRICAL CHARACTERISTICS(Ta= 25C) Characte ristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Base Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) VBE(ON) Te st Conditions IC= 100A , IE =0 IC= 1mA , IB=0 IE =100A , IC=0 VCB= 25V , IE = 0 VEB= 3V , IC=0 VEB= 1V, IC =50mA VEB= 1V, IC =500mA IC= 500 mA , IB=50mA IC= 500mA , IB=50mA VCE =1V, Ic =10mA Min 40 20 5 Typ Max Unit V V V 100 100 64 40 120 90 0.16 0.91 0.6 0.67 0.6 1.2 0.7 202 nA nA V V V hEF CLASSIFICATION Classification hEF D 64-91 E 78-112 F 96-135 G 112-166 H 144-202 1-3 2002/01.rev.A PJ2N9013 NPN Epitaxial Silicon Transistor STATIC CHARACTERISTIC DC CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE CURRENT GAIN-BANDWIDTH PRODUCT 2-3 2002/01.rev.A PJ2N9013 NPN Epitaxial Silicon Transistor 3-3 2002/01.rev.A |
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